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直径300mm硅片的生产技术是当今硅材料生产研究的重要方向之一,而晶体生长 界面的形状、温度分布、晶体中氧的浓度和均匀性等对熔体流动状态十分敏感,采用实验的方 法来测量熔体的流动、温度场分布是很困难的,因此很难通过实验的方法获得熔体的流动是如 何影响晶体生长的质量的,而数值模拟能提供熔体流动、温度分布等详细内容,为单晶硅的生 长提供有利的指导.本文采用低雷诺数的K-ε紊流模型,对直径300mm的大直径单晶硅生 长进行了数值模拟,通过熔体在有、无勾形磁场作用时的流场、温度场的分析,阐明了勾形磁 场影响熔体流动的机理.
The production technology of 300mm diameter silicon wafer is one of the most important research directions in the field of silicon material production. The shape, temperature distribution, the concentration and uniformity of oxygen in the crystal are very sensitive to the flow state of the melt. The experimental method It is very difficult to measure the flow and temperature distribution of the melt. Therefore, it is difficult to experimentally obtain how the melt flow affects the quality of crystal growth. Numerical simulations can provide detailed information on melt flow and temperature distribution , Providing a good guide for the growth of single crystal silicon.In this paper, a low Reynolds number K-ε turbulence model was used to simulate the growth of large diameter single crystal silicon with a diameter of 300mm. The effect of flow field, temperature field analysis, clarify the hook-shaped magnetic field affect the melt flow mechanism.