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比较了Si~+ 单注入和Si~+ 、Mg~+(隐埋)双注入GaAsMESFET的特性.实验表明,设置高能注入Mg~+隐埋层后,可大大消除衬底背景杂质对有源层的影响,容易制成性能优于Si~+单注入的GaAs E-和D-MESFET,并能提高阈值电压V_(tb)均匀性.
The characteristics of Ga ~ + single implanted Si ~ + and Mg ~ + (buried) double implanted GaAsMESFET are compared.The experimental results show that the implantation of high energy Mg ~ + buried layer can greatly eliminate the background impurity to the active layer , It is easy to fabricate GaAs E- and D-MESFETs with better performance than Si ~ + single implants and improve the threshold voltage V_ (tb) uniformity.