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应用二维器件仿真程序PISCES Ⅱ ,模拟计算了新型槽栅结构器件中凹槽拐角效应的影响与作用 ,讨论了槽栅结构MOSFET的沟道电场特征及其对热载流子效应、阈值电压特性等的影响 .槽栅结构的凹槽拐角效应对抑制短沟道效应和抗热载流子效应是十分有利的 ,并且拐角结构在 4 5°左右时拐角效应最大 .调节拐角与其他结构参数 ,器件的热载流子效应、阈值电压特性、亚阈值特性、输出特性等都会有较大的变化
The influence and function of the groove corner effect in the novel trench-gate structure device are simulated and simulated by the PISCES Ⅱ, a two-dimensional device simulation program. The channel electric field characteristics of the trench-gate MOSFET and its influence on the hot carrier effect, threshold voltage characteristic Etc. The groove corner effect of groove-grid structure is very favorable for suppressing the short-channel effect and the hot-carrier-proof effect, and the corner effect has the largest corner effect at about 4 5 ° .Adjusting the corner and other structural parameters, Device hot carrier effect, threshold voltage characteristics, sub-threshold characteristics, output characteristics, etc. will have a greater change