据报道,Intel 公司研究人员研制成世界上最小的 SRAM 存储单元,仅有1μm~2。做成存储器芯片方阵的这些单元是全功能 SRAM 器件的部件,采用Intel 公司新一代90nm 工艺技术制作。这一成就成为实现2003年新生产工艺技术目标的里程碑。Intel 公司1μm~2 SRAM 单元为硅工艺技术建立了一个新的密度标准。这一结果使人们提前进入了生产微处理器和其它产品的90nm 工艺技术水平。Intel 公司研究人员制作了52Mb 的芯片,在面 According to reports, Intel company researchers developed the world’s smallest SRAM memory cell, only 1μm ~ 2. These cells, which are made into a memory chip array, are part of a full-featured SRAM device and are manufactured using a new generation of 90nm process technology from Intel Corporation. This achievement has become a milestone in achieving the goals of the new production technology in 2003. Intel Corporation 1μm ~ 2 SRAM cells for silicon technology to establish a new density standard. This result allows people to advance into the production of microprocessors and other products 90nm process technology level. Intel company researchers produced a 52Mb chip, in the face