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采用磁控溅射方法和热处理工艺在Si衬底上制备了不同Al质量分数的Mg_2Si薄膜,研究了不同Al质量分数对Mg_2Si薄膜结构及其电学性质的影响。通过X射线衍射仪(XRD)、扫描电子显微镜(SEM)和四探针测试仪对Al掺杂Mg_2Si薄膜的晶体结构、表面形貌和电学性质进行表征和分析。结果表明:采用磁控溅射技术在Si衬底上成功制备了不同Al质量分数的Mg_2Si薄膜,样品表面表现出良好的连续性,在Mg_2Si(220)面具有择优生长性。随着质量分数的增加,结晶度先增加后降低,晶粒尺寸减小,且在Al质量分数为1.58%时结晶度最好。此外,样品电阻率也随着Al质量分数的增加逐渐降低,表明Al掺杂后的Mg_2Si薄膜具有更好的导电性,这对采用Mg_2Si薄膜研制半导体器件有着重要的意义。
Mg_2Si films with different Al content were prepared on Si substrate by magnetron sputtering and heat treatment. The effects of Al content on the structure and electrical properties of Mg_2Si films were studied. The crystal structure, surface morphology and electrical properties of Al-doped Mg_2Si films were characterized and characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM) and four-probe tester. The results show that Mg_2Si films with different Al content are successfully prepared on Si substrate by magnetron sputtering. The surface of Mg_2Si thin films shows good continuity and superior growth on Mg_2Si (220) surface. With the increase of mass fraction, the crystallinity first increases and then decreases, the grain size decreases, and the crystallinity is best when Al mass fraction is 1.58%. In addition, the resistivity of samples decreases with the increase of Al content, which shows that Al-doped Mg_2Si films have better electrical conductivity. This is of great significance to the development of semiconductor devices using Mg_2Si films.