论文部分内容阅读
针对目前用于半导体材料掺杂浓度纵向深度分布测量用的方法，如Ｃ－Ｖ法、电化学法等方法对样品造成的损伤或污染，本文提出一种非接触式的光热法测量技术。并结合室温下光热法测得的实验数据计算了ＧａＰ∶Ｎ多层材料中不同杂质浓度下的热导率，获得热导率随半导体内掺入的杂质浓度增加而减小的关系。这一结果与现有用光热法测量单层结构的半导体材料得到的规律相符合，从而表明了用光热法对层状半导体材料进行掺杂浓度纵向分布测量的可行性；同时还讨论半导体内临近层间结晶程度的差异对光热信号幅度造成的影响。
Aiming at the damage or pollution caused by the methods such as C-V method and electrochemical method which are used to measure the vertical depth distribution of doping concentration of semiconductor material, a non-contact photothermal method is proposed in this paper. Combined with the experimental data measured by photothermal method at room temperature, the thermal conductivities at different impurity concentrations in GaP: N multilayered materials were calculated and the relationship between the thermal conductivities and the impurity concentration in semiconductors was obtained. This result is in good agreement with the existing law of photothermal method for measuring the single-layer structure of semiconductor materials, which shows the feasibility of using the photothermal method to measure the longitudinal distribution of the doping concentration of the layered semiconductor material. In the meantime, The influence of the difference of crystallinity between adjacent layers on the amplitude of photothermal signals.