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报道了通过 Co/ Ni/ Si Ox/ Si(10 0 )体系固相反应 ,实现三元硅化物 (Co1 - x Nix) Si2 薄膜外延生长及薄膜特性的表征 .测试结果表明 ,中间氧化硅层对原子扩散起到阻挡作用 .XRD和 RBS图谱显示 ,有中间层的样品所形成的硅化物膜和硅衬底有良好的外延关系 .而 Co/ Ni/ Si(10 0 )体系 ,则形成多晶硅化物膜 ,和硅衬底没有外延关系 .外延三元硅化物 (Co1 - x Nix) Si2 膜的晶格常数介于 Co Si2 和 Ni Si2 之间 ,从而可以降低生成膜的应力 .薄膜的厚度约为110 nm;最小沟道产额 (χmin)为 2 2 % .外延三元硅化物膜的电阻率约为 17μΩ· cm ;高温稳定性达 10 0 0℃ ,与 Co Si2膜相当
Reported that the epitaxial growth of the ternary silicide (Co1 - x Nix) Si2 thin films and the characterization of the films were characterized by the solid state reaction of the Co / Ni / Si Ox / Si Atomic diffusion plays a blocking role.XRD and RBS spectra show that the silicide films formed by the interlayers have a good epitaxial relationship with the silicon substrate, whereas the Co / Ni / Si (100) system forms polycide The film has no epitaxial relationship with the silicon substrate.The lattice constant of the epitaxial ternary silicide (Co1 - x Nix) Si2 film is between that of Co Si2 and Ni Si2, so that the stress of film formation can be reduced.The thickness of the film is about 110 nm and the minimum channel yield (χmin) is 22% .The resistivity of the epitaxial ternary silicide film is about 17μΩ · cm, the stability at high temperature is about 100 ℃, which is equivalent to that of Co Si2 film