论文部分内容阅读
关于扩散型应变片的基本特性有:①压力灵敏度和非线性。压力灵敏度不仅取决于膜片晶面和配置电阻的晶向,而且与扩散电阻层的杂质浓度和破坏应力有关,设N-Si 基片杂质浓度为10~(-15)/cm~3,破坏应力为(4～5)×10~9达因/cm~2,配置p 型电阻浓度为7×10~(18)/cm~8,则对(100)晶面基片破坏时压力灵敏度为15%,对(111)晶面基片为10%。另一方面,膜片受压时产生非线性,当膜片中心挠度大于膜片厚度
The basic characteristics of diffusion-type strain gauge are: ① pressure sensitivity and nonlinearity. The pressure sensitivity depends not only on the orientation of the crystal plane of the diaphragm and the orientation of the configuration resistance, but also on the impurity concentration and the breaking stress of the diffusion resistance layer. The impurity concentration of the N-Si substrate is set to 10? (-15) / cm? The stress sensitivity is (4 ~ 5) × 10 ~ 9 dyne / cm ~ 2 and the p-type resistance is set to 7 × 10 ~ (18) / cm ~ 15% for the (111) crystal plane substrate is 10%. On the other hand, the pressure generated by the diaphragm nonlinear, when the diaphragm center deflection greater than the thickness of the diaphragm