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采用场极板结终端技术提高LDMOS击穿电压,借助二维器件仿真器MEDICI软件对基于体硅CMOS工艺500V高压的n-LDMOS器件结构和主要掺杂参数进行优化,确定漂移区的掺杂浓度(ND)、结深(Xj)和长度(LD)。对多晶硅场极板和两层金属场极板的结构参数进行模拟和分析,在不增加工艺复杂度的情况下,设计一种新型的具有两层金属场极板结构的500Vn-LDMOS。模拟结果表明,双层金属场极板结构比无金属场极板结构LDMOS的击穿电压提高了12%,而这两种结构LDMOS的比导通电阻(RS)基本一致。
The LDMOS breakdown voltage was improved by field termination technology. The structure and main doping parameters of n-LDMOS device based on bulk silicon CMOS process at 500V were optimized by using the 2D device simulator MEDICI software to determine the doping concentration ND), junction depth (Xj) and length (LD). The structure parameters of the polysilicon field plate and the two metal field plates are simulated and analyzed, and a novel 500Vn-LDMOS with two metal field plate structures is designed without increasing the process complexity. The simulation results show that the breakdown voltage of LDMOS with double-layer metal field plate structure is increased by 12% compared with LDMOS without metal field plate structure, and the specific resistance (RS) of LDMOS of these two structures is basically the same.