从数值解源端和饱和点的表面电势出发 ,考虑模拟电路对 SOI MOSFET模型的一些基本要求如电荷守恒、器件源漏本征对称、各个工作区间连续并且高阶可导以及全耗尽和部分耗尽两种工作模式的转变 ,构建了一个能够满足这些要求的精确的器件模型 .同时包含了深亚微米 SOI MOSFET的一些二级效应如漏极诱生势垒降低效应 (DIBL )、速度饱和效应、自热效应等 .这个模型的参数相对较少并且精确连续 ,能够满足在模拟电路设计分析中的应用要求 Based on the surface potential of the numerical solution source and saturation point, some basic requirements of the SOI MOSFET model such as conservation of charge, eigenstate symmetry of the source and drain of the device, continuous and high-order conductable and fully depleted and partial Depletion of two modes of operation to build an accurate device model that meets these requirements while incorporating some secondary effects of deep submicron SOI MOSFETs such as DIBL, Effect, self-heating effect, etc. The parameters of this model are relatively small and precisely continuous to meet the application requirements in analog circuit design and analysis