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本文用集团模型EHT方法计算GaAs_(1-x)Px中的N-等电子陷阱能级.计算表明,必须计入原子的激发态轨道才能使结果得到较为实质的改善.
In this paper, we calculate the N-electron trap level in GaAs_ (1-x) Px by using the EHT method of the group model. The calculations show that the excited state of the atom must be taken into account to achieve a substantial improvement in the results.