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近年来,在半导体光电化学领域中,半导体超晶格(量子阱)材料作为一种新型的光电极的研究已引起人们广泛的注意和重视.由于半导体超晶格(量子阱)能带的量子化,因此具有许多完全不同于体材料的新特性,如其量子阱中的激子受到阱宽的限制不仅寿命长于相应的体材料,而且有较强的光吸收性能;量子阱中光生热载流子的能量驰豫明显慢于体材料,具有较长的热载流子寿命,大大增强了热载流子效应以及其载流子迁移率大于体材料等.这些特性都有利于提高光能的转换效率.本文研究了晶格匹配型单量子阱GaAs/Al_xGa_(1-x)As电极
In recent years, the research of semiconductor superlattice (quantum well) material as a new type of photoelectrode has drawn much attention and attention in the field of semiconductor photoelectrochemistry. Due to the quantum energy of the semiconductor superlattice (quantum well) band Therefore, it has many new features completely different from bulk materials. For example, excitons in quantum wells are limited by well width longer than corresponding bulk materials and have strong light absorption properties. The photo-thermal carrier current The relaxation of the energy of the daughter is significantly slower than that of the bulk material, with a longer lifetime of the hot carrier, greatly enhancing the hot carrier effect and the carrier mobility greater than that of the bulk material, etc. These properties are beneficial for improving the light energy Conversion efficiency.This paper studies the lattice-matched single quantum well GaAs / Al_xGa_ (1-x) As electrode