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报道了 MOCVD生长的高性能 85 0 nm氧化限制型垂直腔面发射激光器 .研制出的氧化直径为 9μm的激光器2 5℃时的斜效率和阈值电流分别为 0 .82 m W/m A和 2 .5 9m A,激光器在 2 3m A时输出 16 m W最大光功率 .氧化直径为 5μm的激光器 2 5℃时的最小阈值电流为 5 70μA,其最大饱和光功率为 5 .5 m W.
Reported a high performance 85 0 nm oxide confinement vertical cavity surface emitting laser grown by MOCVD.The inclinometer efficiency and threshold current of a laser with an oxidation diameter of 9 μm at 25 ℃ were 0.82 mW / m A and 2 .5 9m A and the laser outputs a maximum optical power of 16 mW at 23 m A. The laser with an oxidized diameter of 5 μm has a minimum threshold current of 5 70 μA at 5 ° C and a maximum saturated optical power of 5.5 mW.