论文部分内容阅读
Enhancement of light extraction in a GaInN light-emitting diode(LED)employing an omni-directional reflector(ODR)consisting of GaN,SnO_2 nanorod and an Ag layer was presented.The ODR comprises a transparent,quarterwave layer of SnO_2 nanorod claded by silver and serves as an ohmic contact to p-type GaN.Transparent SnO_2 sols were obtained by sol-gel method from SnCl_2·2H_2O,and SnO_2 thin films were prepared by dip-coating technique.The average size of the spherical SnO_2 particles obtained is 200 nm.The refractive index of the nanorod SnO_2 film layer is 2.01.The GaInN LEDs with GaN/SnO_2/Ag ODR show a lower forward voltage.This was attributed to the enhanced reflectivity of the ODR that employs the nanorod SnO_2 film layer.Experimental results show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni/Au contacts and conventional LEDs employing a distributed Bragg reflector(DBR).
Enhancement of light extraction in a GaInN light-emitting diode (LED) employing an omni-directional reflector (ODR) consisting of GaN, SnO 2 nanorod and an Ag layer was presented. The ODR comprises a transparent, quarterwave layer of SnO 2 nanorod claded by silver and serves as an ohmic contact to p-type GaN. Transparent SnO 2 sols were obtained by sol-gel method from SnCl 2 .2H 2 O and SnO 2 thin films were prepared by dip-coating technique. The average size of the spherical SnO 2 particles was obtained 200 nm. The refractive index of the nanorod SnO 2 film layer is 2.01. The GaInN LEDs with GaN / SnO 2 / Ag ODR show a lower forward voltage. This was attributed to the enhanced reflectivity of the ODR that devices the nanorod SnO 2 film layer. show that ODR-LEDs have lower optical losses and higher extraction efficiency as compared to conventional LEDs with Ni / Au contacts and conventional LEDs employing a distributed Bragg reflector (DBR).