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由于微波半导体器件如IMPATT二极管所承受的功率密度很大,达“兆瓦/厘米~2”级,因此在器件的工作温度下接触金属Au向半导体中扩散是一个严重的问题.为了有效地防止金向半导体中扩散,须在导电层Au和接触层Ti之间加进一层阻挡层.一般公认铂是较理想的阻挡材料.我们在超高真空电子束蒸发台内用电子束蒸发Ti和Pt,再用电阻蒸发Au,一次完成Ti-Pt-Au三元非合金欧姆接触金属化层,并已在IMPATT二极管的研制中得到实际应用.
Due to the high power densities experienced by microwave semiconductor devices such as IMPATT diodes, reaching the level of “megawatts / cm2 to 2”, diffusion of metal Au into the semiconductor at the device operating temperature is a serious problem. In order to effectively prevent The diffusion of gold into the semiconductor requires the addition of a barrier layer between the conductive layer Au and the contact layer Ti.It is generally accepted that platinum is an ideal barrier material.We have electron beam evaporated Ti in an ultrahigh vacuum electron beam evaporation stage Pt, and then evaporate the Au by resistance, completing the Ti-Pt-Au ternary non-alloy ohmic contact metallization in one time and has been practically used in the development of the IMPATT diode.