论文部分内容阅读
本文介绍GaAs MESFET(砷化镓金属半导体场效应晶体管)的一种多倍频程模型。它包括28个频率独立元件,可在2到11千兆赫之间有效工作。该模型考虑了栅间有无欧姆接触两种情况。模型是在实际偏压条件下分别利用有源器件的直流和高频特性以及等效电路的测定而得到的,因此,可达到两个目的:1)总模型的拓朴学特性可根据熟知的比较简单的部分模型导出;2)最优化的初始值足以精确地提供可靠的物理解。
This article describes a multi-octave band model for a GaAs MESFET (GaAs Metal Field Effect Transistor). It includes 28 frequency independent components that work efficiently between 2 and 11 GHz. The model takes into account the presence or absence of ohmic contact between the grid. The model is derived from the direct and high frequency characteristics of the active devices and the equivalent circuit measurements under actual bias conditions, respectively, and therefore achieves two purposes: 1) The topological properties of the total model can be compared according to well-known comparisons Simple partial model derivation; 2) The initial value of optimization is sufficient to provide a reliable physical solution accurately.