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为了研究高介电常数(高k)栅介质材料异质栅中绝缘衬底上的硅和金属-氧化物-硅场效应晶体管的短沟道效应,为新结构器件建立了全耗尽条件下表面势和阈值电压的二维解析模型.模型中考虑了各种主要因素的影响,包括不同介电常数材料的影响,栅金属长度及其功函数变化的影响,不同漏电压对短沟道效应的影响.结果表明,沟道表面势中引入了阶梯分布,因此源端电场较强;同时漏电压引起的电势变化可以被屏蔽,抑制短沟道效应.栅介电常数增大,也可以较好的抑制短沟道效应.解析模型与数值模拟软件ISE所得结果高度吻合.
In order to investigate the short-channel effect of silicon and metal-oxide-silicon field-effect transistors on an insulating substrate in a high dielectric constant (high-k) gate dielectric material heteroscaper, a fully depleted condition was established for the new device Surface potential and threshold voltage of the model analysis of the impact of various major factors, including the influence of different dielectric constant materials, the length of the gate metal and the work function changes, the different drain voltage on the short-channel effect The results show that the channel surface potential is introduced into the ladder distribution, so the source electric field is strong, while the potential changes caused by the leakage voltage can be shielded, short-channel effect can be suppressed.The gate dielectric constant increases, Good suppression of short channel effect.The analytical model and numerical simulation software ISE results are highly consistent.