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AlN/GaN high-electron-mobility transistors(HEMTs)on SiC substrates were fabricated by metalorganic chemical vapor deposition(MOCVD)and then characterized.An Si/Ti/Al/Ni/Au stack was used to reduce ohmiccontactresistance(0.33 mm)atalowannealingtemperature.Thefabricateddevicesexhibitedamaximum drain current density of 1.07 A/mm(VGS D1 V)and a maximum peak extrinsic transconductance of 340 mS/mm.The off-state breakdown voltage of the device was 64 V with a gate–drain distance of 1.9 m.The current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 36 and 80 GHz with a 0.25 m gate length,respectively.
AIN Si / Ti / Al / Ni / Au stack was used to reduce ohmic contact resistance (0.33 mm) atalowannealingtemperature The provision of a drain current density of 1.07 A / mm (VGS D1 V) and a maximum peak extrinsic transconductance of 340 mS / mm. The off-state breakdown voltage of the device was 64 V with a gate-drain distance of 1.9 m. current gain extrinsic cutoff frequency fT and the maximum oscillation frequency fmax were 36 and 80 GHz with a 0.25 m gate length, respectively.