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本文报道微微秒激光脉冲激发下分子束外延(MBE)生长的GaAs-Ca_(0.6)Al_(0.4)As多量子阱异质结构的光荧光特性.同时观察到发生在n=1,2,3电子子能带和相应重空穴子能带之间的激子跃迁.实验数据和理论计算符合较好.在理论计算中,我们考虑了实际势阱的有限深度和GaAs Γ_s~c导带的非抛物线性质.用所述计算方法确定阱宽可达到相当满意的精度.
In this paper, the fluorescence characteristics of GaAs-Ca_ (0.6) Al_ (0.4) As MQW heterostructure grown by molecular beam epitaxy (MBE) excited by picosecond laser pulses are reported. At the same time, Exciton transition between the electron sub-band and the corresponding heavy-hole energy band.The experimental data agree well with the theoretical calculation.In the theoretical calculation, we consider the finite depth of the actual potential well and the non- Parabolic nature. Using this calculation method to determine the well width achieves quite satisfactory accuracy.