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上海科大半导体器件物理研究室自1979年9月对VMOS场效应管开始研究,经过一年多的努力,解决了一系列技术上的关键问题,研制成了“纵向沟导VMOS高频高速功率晶体管”兼有双极型管和平面MOS管优良特性的一种新型电子器件,并在1981年4月通过了科研成果鉴定.这种器件具有耐压高、漏电小、跨导线性好、开启电压稳定等特点,并且无二次击穿现象.其主要的典型参数如下:
STMicroelectronics began researching VMOS FETs in September 1979. After more than a year of hard work, it solved a series of key technical problems and developed “a vertical guide VMOS high-frequency high-speed power transistor ”A new type of electronic device combines the excellent characteristics of bipolar and planar MOS transistors and passed the scientific research appraisal in April 1981. This device has high withstand voltage, small leakage, good transconductance and high turn on voltage Stability and other characteristics, and no secondary breakdown phenomenon.The main typical parameters are as follows: