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研发了具有阳极端点支撑悬浮空气桥结构的太赫兹GaAs肖特基二极管工艺制作技术。该制作技术可以大幅降低GaAs肖特基二极管的寄生电容。利用此项技术,制作出了具有极小寄生电容和串联电阻的太赫兹GaAs肖特基二极管。GaAs肖特基二极管芯片采用了小尺寸芯片设计,芯片厚度为25μm、芯片长度为175μm、芯片宽度为55μm,其中单阳极GaAs肖特基二极管的结电容小于4 fF,串联电阻小于5Ω,总电容的典型值为7～8 fF。根据GaAs肖特基二极管的总电容(CT)计算,二极管的截止频率(fc)高达3.9 THz。这种GaAs肖特基二极管适合应用在太赫兹频段上。
The technology of terahertz GaAs Schottky diode with floating anode structure supporting the air bridge was developed. This fabrication technique drastically reduces the parasitic capacitance of GaAs Schottky diodes. Using this technique, a terahertz GaAs Schottky diode with minimal parasitic capacitance and series resistance has been fabricated. GaAs Schottky diode chip with a small size chip design, the chip thickness of 25μm, the chip length of 175μm, the chip width of 55μm, single-anode GaAs Schottky diode junction capacitance is less than 4fF, series resistance is less than 5Ω, the total capacitance The typical value is 7 ~ 8 fF. Based on the total capacitance (CT) of the GaAs Schottky diode, the diode’s cut-off frequency (fc) is as high as 3.9 THz. This GaAs Schottky diode is suitable for use in the terahertz band.