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本文分析了著者们为降低超高频电子器件中寄生振荡问题所做的工作。文章讨论了电子器件中出现寄生振荡的原因。着重介绍了为减小O型行波管,M型行波管和脉冲磁控管中的寄生振荡所进行的理论和实验研究的结果。研究表明,如用两个管内衰减器,将其放置于靠近O型行波管高频输入端约1/8～1/10L_0的距离上(在标准的O型行波管中是放置在距输入端约1/3 L_0的地方),式中L_0为器件的总长度,则O型行波管中寄生振荡的功率电平(高次谐波分量,多频率运用下的复合分量)可以降低5～7分贝。在M型行波管中寄生振荡功率的降低是以缩短器件的总长度来保证的,器件的总长度受到M型行波管互作用过程中电子注第一批电子打到慢波系统上去的条件所限制。讨论了寄生振荡功率近似计算的方法,以及在具有任意输入信号频率的器件中寄生振荡的计算方法。本文提出,在表征超高频电子器件质量的各种系数中必须考虑寄生振荡的功率电平。
This article examines the authors’ efforts to reduce parasitic oscillations in UHF electronic devices. The article discusses the causes of parasitic oscillations in electronic devices. The results of theoretical and experimental researches on reducing the parasitic oscillation in O-type traveling wave tube, M-type traveling wave tube and pulsed magnetron are emphatically introduced. Studies have shown that if two in-tube attenuators are used, they are placed approximately 1 / 8-1 / 10L_0 close to the high frequency input of the O-type TWT (in a standard O-type TWT placed at a distance Input side of about 1/3 L_0), where L_0 is the total length of the device, then the parasitic oscillation power level (harmonic component, composite component under multi-frequency utilization) in the O-type TWT can be reduced 5 ~ 7 dB. The reduction of parasitic oscillation power in M-type traveling wave tube is guaranteed by shortening the overall length of the device. The total length of the device is affected by the interaction of the M-type traveling wave tube with the first electron from the electron to the slow wave system Conditions are limited. The method of approximate calculation of parasitic oscillation power and the calculation method of parasitic oscillation in a device with arbitrary input signal frequency are discussed. This paper proposes that the power levels of spurious oscillations must be considered in the various coefficients characterizing the quality of UHF electronic devices.