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利用脉冲激光法制备了ZnO∶Al透明导电膜。通过对膜进行霍尔系数测量及SEM、XRD测试分析 ,详细研究了沉积时的基片温度、氧分压强对膜的透光率和电阻率的影响。结果表明 :基片温度、氧分压强影响着膜的电学、光学性能和膜的结晶状况。从电学分析看出 :基片温度从 2 0 0℃升到 30 0℃过程中 ,膜的载流子浓度、透光率和光隙能相应增大。在氧分压强为0Pa、基片温度为 4 0 0℃下沉积的膜 ,其电阻率具有较低值 ,且在可见光区其透光率约为 90 %。
ZnO: Al transparent conductive films were prepared by pulsed laser method. The effects of substrate temperature and oxygen partial pressure on the transmittance and resistivity of the films were investigated in detail by measuring the Hall coefficient and analyzing the SEM and XRD results. The results show that the substrate temperature and oxygen partial pressure affect the electrical and optical properties of the film and the crystallization of the film. From the electrical analysis, we can see that the carrier concentration, optical transmittance and optical gap of the film increase correspondingly when the temperature of the substrate increases from 200 ℃ to 300 ℃. The films deposited at a partial pressure of oxygen of 0 Pa and a substrate temperature of 400 ° C have a lower resistivity and a transmittance of about 90% in the visible region.