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本文介绍了用背散射和核反应技术分析用LPCVD 方法制备的氮化硅薄膜的方法及其结果.本方法包括用背散射和沟道效应相结合的方法直接测量薄膜的氮、硅组分比例及其随深度的变化.该方法的特点是定量、非破坏性.分析结果表明:用LPCVD方法生长的氮化硅膜,氮与硅的组分比例与四氮化三硅相符合,组分比的深度分布均匀.上述方法与椭圆偏振测厚仪相结合还可以求得薄膜的密度。 本方法可用来分析半导体材料上生长的任何其它介质薄膜. 氮化硅薄膜中的氧含量是影响薄膜性质的另一个参数.用核反应~(16)O(d,p)~(17)O测量了用LPCVD方法制备的氮化硅薄膜中的氧含量.结果表明:薄膜中的氧含量为1.5％(相对于薄膜中的氮原子数).用核反应~(16)O(d,p)~(17)O分析氮化硅薄膜中氧含量的灵敏度在0.3％左右(相对于薄膜中的氮原子数).
In this paper, the method of backscattering and nuclear reaction for the analysis of silicon nitride films prepared by LPCVD and the results of their analysis are described in this paper. The method includes the direct measurement of the ratio of nitrogen and silicon components by the combination of backscattering and channeling, With the change of depth.The method is characterized by quantitative, non-destructive analysis results show that: the silicon nitride film grown by LPCVD method, the ratio of nitrogen and silicon components and silicon nitride match, the composition ratio Of the depth of the distribution of the above method combined with the ellipsometer thickness can also be obtained by the film density. This method can be used to analyze any other dielectric thin films grown on semiconductor materials.Oxygen content in silicon nitride films is another parameter that affects the properties of thin films.Using the nuclear reaction ~ (16) O (d, p) ~ (17) O The results show that the oxygen content in the film is 1.5% (relative to the number of nitrogen atoms in the film) (17) O The sensitivity of O analysis for the oxygen content in silicon nitride films is around 0.3% (relative to the number of nitrogen atoms in the film).