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研究了优等化离子体化气相学沉积法(PECVD)在太阳能级n型直拉单晶(Cz)硅衬底上沉积i-a-Si:H薄膜工艺,得到较好的钝化效果。分析了气体流量和温度、气压等工艺参数对薄膜沉积和硅片钝化效果的影响。通过优化参数,钝化后在太阳能级n型Cz硅片(40×40mm)平均少子寿命值在800μs以上,局部在1500μs以上,得到了钝化后平均表面复合速率S<9.4cm/s的优良钝化效果;若硅片τbulk为2ms,则S<5.6cm/s。
The process of deposition of i-a-Si: H thin film on the solar grade n-type Czochralski (Cz) silicon substrate by the plasma enhanced chemical vapor deposition (PECVD) was studied and the better passivation effect was obtained. The influences of gas flow rate, temperature and pressure on the film deposition and silicon passivation were analyzed. By optimizing the parameters, the average lifetime of the solar-grade n-type Cz wafers (40 × 40 mm) was 800 μs or more and the local thicknesses were 1500 μs or more after passivation. The average surface recombination rate after passivation was S <9.4 cm / s Passivation effect; if the wafer τbulk 2ms, then S <5.6cm / s.