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[期刊论文] 作者:ZHAO Lihui,ZHENG Songlin,FENG Jinzhi,, 来源:Chinese Journal of Mechanical Engineering 年份:2014
Lightweight design requires an accurate life prediction for structures and components under service loading histories. However, predicted life with the existing...
[期刊论文] 作者:Xingwei Wang,Ting Zhou,Tianheng Xu,Songlin Feng,Honglin Hu,Yanliang Jin, 来源:中国通信(英文版) 年份:2020
Statistical Signal Transmission (SST) is a technique based on orthogonal fre-quency-division multiplexing (OFDM) and adopts cyclostationary features, which can...
[会议论文] 作者:Xilin Zhou,Liangcai Wu,Zhitang Song,Feng Rao,Bo Liu,Songlin Feng, 来源:International Conference on Nanoscience & Technology,China 2 年份:2013
Phase-change memory (PCM) emerged in recent years has been regarded as one of the most promising solutions to replace standard floating-gate devices for the next generation nonvolatile memory due to i...
[会议论文] 作者:Sannian Song,Zhitang Song,Dongning Yao,Yegang Lv,Yifeng Gu,Wei Xi,Songlin Feng, 来源:第一届国际ALD应用大会暨第二届中国ALD学术交流会 年份:2012
[会议论文] 作者:Yan CHENG,Xiaodong HAN,Ze ZHANG,Qifei GONG,Ting ZHANG,Zhitang SONG,Bo LIU,Songlin FENG, 来源:2009第十三届北京分析测试学术报告会 年份:2009
[会议论文] 作者:Yan CHENG,Qifei GONG,Xiaodong HAN,Ze ZHANG,Ting ZHANG,Zhitang SONG,Bo LIU,Songlin FENG, 来源:2009第十三届北京分析测试学术报告会 年份:2009
[会议论文] 作者:Min Zhu,Liangcai wu,Feng Rao,Zhitang Song,Xingling Ji,Kun Ren,Bo Liu,Songlin Feng, 来源:International Conference on Nanoscience & Technology,China 2 年份:2013
With fast crystallization speed, good endurance and low energy consumption, Ti-doped Sb2Te3 (TST) PCM is a promising phase change material replacing well known Ge2Sb2Te5 (GST).The uniformly distribute...
[会议论文] 作者:Kun Ren,Feng Rao,Shilong Lv,Zhitang Song,Min Zhu,Liangcai Wu,Bo Liu,Songlin Feng, 来源:International Conference on Nanoscience & Technology,China 2 年份:2013
The contact resistivity in the interface between TiN material and phase change materials are studied by circular transfer length method.The three phase change materials are chosen to be Ge2Sb2Tes, Ti0...
[会议论文] 作者:Chao Zhang,Bomy Chen,Songlin Feng,Zhitang Song,Guanping Wu,Bo Liu,Yan Liu,Heng Wang,Lianhong Wang,Lei, 来源:International Conference on Nanoscience & Technology,China 2 年份:2013
Phase change random access memory (PCRAM) featured by its fast access time, low power, low cost, long endurance, good data retention, the well-matched complementary metal oxide semiconductor (CMOS) te...
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