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The development of next 32 nm generation and below needs innovations on not only device structures, but also fabrication......
This paper presents and experimentally verifies an optimized design procedure for a CMOS low noise operational amplifier......
This paper gives a detailed analysis of the time-dependent degradation of the threshold voltage in AlGaN/GaN high electr......
A hearing aid on-chip system based on accuracy optimized front- and back-end blocks is presented for enhancing the signa......
This paper studies the amplitude of random telegraph noise(RTN) caused by a single trap in the silicon film of ultra-thi......
Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted si
In this paper, the effect of floating body effect(FBE) on a single event transient generation mechanism in fully deplete......
A novel high performance Semi SJ-CSTBT is proposed with the p-pillar under the bottom of the trench gate. The inserted p......
In this paper,we have studied the total ionizing dose(TID)radiation response up to 2 Mrad(Si)of silicon-oxide-nitride-ox......
INTRODUCTION With the breakdown of Dennard’s scaling rule,chip power for a given area size is not constant as transisto......
随着纳米加工技术的发展,纳米结构器件必将成为将来的集成电路的基础.本文介绍了几种用电子束光刻、反应离子刻蚀方法制备硅量子线......
