阐述了射频磁控溅射方法制备的柔性衬底ITO透明导电膜的结构和光电特性与靶材中SnO2含量的关系.ITO靶材中In2O3掺杂SnO2最佳比例(......

通过射频磁控溅射工艺制备了TiO2复合纳米薄膜并分析了薄膜的结构及光催化特性.退火温度在350-550℃时Fe3+-TiO2复合薄膜均为锐钛......

Low resistivity and highly transparent ITO conducting films for solar cell applications were fabricated at low temperatu......

Aluminum-doped zinc oxide (AZO) thin films were deposited on sapphire (002) andglass substrates by two different sputter......