热壁CVD相关论文
由于禁带宽，SiC适合于制造紫外光探测器，SiC光控器件也只能受控于紫外光源而非常用的可见和红外光源。为使SiC器件也能避免电磁干扰......
Micro-Raman Spectroscopy for Stress Evaluation of 3C-SiC Epitaxially Grown on Si Substrate by Hot Wa
A series of cubic SiC single crystals were heteroepitaxially grown by the hot-wall chemical vapor deposition (CVD) using......
GaN microcrystalline grains were grown by hot-wall chemical vapor deposition on Si (111)substrate. These grains with dia......
随着SiC器件广泛而深入的研究，光控碳化硅器件也渐渐地引起人们的研究兴趣。由于禁带宽，SiC光开关只能受控于紫外光源而非常用的可见......
选择合适的沉积室内壁材料是热壁化学气相沉积制备Pt薄膜过程中降低前驱体在沉积室内壁上大量消耗,进而保证沉积室内Pt前驱体分压......
利用SiCGe能隙可在窄于碳化硅能隙的范围内适当剪裁的特点,在SiC衬底上生长p-SiCGe薄膜,通过调节p-SiCGe中Ge组分的比例来调节SiCG......
