论文部分内容阅读
采用MOCVD生长的高Al含量n-AlxGa1-xN制备了金属-半导体-金属(MSM)结构紫外日盲探测器。材料为非故意掺杂n型,表面无裂缝。经三轴X射线衍射(TAXRD)对外延材料进行测试,AlxGa1-xN半峰宽(FWHM)为155arcs,显示了良好的晶体质量。经光谱响应测试,探测器存在两个峰值响应,波长分别位于255、365nm处,说明探测器同时具有日盲探测和双色探测特征。在6V偏压下255nm处响应度为0.1A/W,并以此推算出AlxGa1-xN材料的Al含量为0.66。
A metal-semiconductor-metal (MSM) structure ultraviolet solar blind detector was fabricated by MOCVD-grown high-Al content n-AlxGa1-xN. Material is not intentionally doped n-type, no cracks on the surface. The epitaxial material was tested by triaxial X-ray diffraction (TAXRD). The full width at half maximum (FWHM) of AlxGa1-xN was 155 arcs and showed good crystal quality. After the spectral response test, the detector has two peak responses at 255 and 365 nm, respectively, indicating that the detector has both blind detection and two-color detection characteristics. The responsivity at 255 nm at a bias voltage of 6 V is 0.1 A / W, and the Al content of the AlxGa1-xN material is estimated to be 0.66.