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半分析法应用于提取金属-氧化物半导体场效应晶体管小信号模型的参数,直接提取法应用于测试结构的焊盘电容和寄生电感的参数提取.在频率高达40G的范围内,90nm的MOSFET器件的模拟的S参数和测试的S参数曲线吻合良好.
一种基于半分析法的MOSFET小信号参数的提取方法
【摘 要】
：
半分析法应用于提取金属-氧化物半导体场效应晶体管小信号模型的参数,直接提取法应用于测试结构的焊盘电容和寄生电感的参数提取.在频率高达40G的范围内,90nm的MOSFET器件的
【机 构】
：
信息学院,华东师范大学,上海200241
【出 处】
：
2016年上海市研究生学术论坛——电子科学与技术
【发表日期】
：
2016年期
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