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红外(IR)遥感成像应用需要高性能的焦平面列阵(FPA),工作在整个红外光谱范围,即短波红外(SWIR):1μm～3μm;中波红外 (MWIR):3 μm～5μm;中长波红外(MLWIR):6μm～8μm;长波红外(LWIR):8μm～14μm;以及超长波红外(VLWR):>14μm。这些不同的光谱波段需要大量高性能的探测器和读出集成电路(ROIC),以便完成各种多光谱的任务。在过去几年中,在HgCdTe探测器列阵和读出集成电路的设计和制造方面取得了重大进展,证明高分辨率、低噪声和大尺寸的焦平面列阵是可以获得的,也是可靠的。 本文介绍了混成焦平面列阵的测量情况和性能参数。在各种结构、各种波段的探测器中,已经获得了大量焦平面列阵探测率D~*的数据,它们包括:(1)截止波长 1.8μm,列阵像元数为 12 ×256元,工作于 295 K,中值 D~*～1.4×10~(12)CM·Hz~(1/2)/W;(2)λ_c=2.4μm,列阵为12×256元,工作于250K,中值探测率D~*=1.6×10~(12)cm·Hz~(1/2)/W,探测器的材料是用分子束外延(MBE)技术生长在晶格匹配的CdZnTe衬底材料上的;(3)PACE-1型探测器,λ_c=2.5μm,列阵元数为1024×1024元,工作在115 K,峰值波长D_λ~*=2.3×10~(13)cm·Hz~(1/2)/W,背景光通量φ_b=1.2×10~(11)ph/cm~2-s;(4)用分子束外延技术在硅衬底上生长HgCdTe外延层,制成中波红外探测器,?
Infrared (IR) remote sensing imaging applications require high performance focal plane arrays (FPAs) that operate over the entire infrared spectrum, ie, SWIR: 1μm to 3μm; MWIR: 3μm to 5μm; Long Wave Infrared (MLWIR): 6 μm to 8 μm; Long Wave Infrared (LWIR): 8 μm to 14 μm; and Long Wave Infrared (VLWR):> 14 μm. These different spectral bands require a large number of high-performance detectors and readout integrated circuits (ROICs) to accomplish a variety of multispectral tasks. In the past few years, significant progress has been made in the design and manufacture of HgCdTe detector and readout integrated circuits, demonstrating that high-resolution, low-noise, and large-size focal plane arrays are obtainable and reliable . This paper introduces the measurement and performance parameters of hybrid coke-planar arrays. In various structures and detectors of various wavebands, a great deal of data of detection rate D ~ * of focal plane arrays have been obtained, which include: (1) a cutoff wavelength of 1.8 μm and an array pixel count of 12 × 256 , Work at 295 K, median D ~ * ~ 1.4 × 10 ~ (12) CM · Hz ~ (1/2) / W; (2) λ_c = 2.4μm, the array is 12 × 256 yuan, , The median detection rate was D * * = 1.6 × 10 ~ (12) cm · Hz ~ (1/2) / W. The detector was grown on a lattice matched CdZnTe substrate by molecular beam epitaxy (MBE) Material; (3) PACE-1 detector, λ_c = 2.5μm, the array element is 1024 × 1024 yuan, work at 115 K, the peak wavelength D_λ ~ * = 2.3 × 10 ~ (13) cm · Hz ~ (1/2) / W, and the background luminous flux φ_b = 1.2 × 10-11 ph / cm ~ 2-s. (4) The HgCdTe epitaxial layer was grown on Si substrate by molecular beam epitaxy Infrared Detectors,?