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采用溶胶-凝胶法合成高纯(<50 mg·kg-1 SiO2)Ce0.8Nd0.2O1.9(NDC)和SiO2含量为500 mg·kg-1的Ce0.8Nd0.2O1.9(NDCSi)体系,将1mol%MoO3分别加入到NDC和NDCSi体系,比较研究MoO3掺杂对体系微观结构和电性能的影响。通过X射线衍射(XRD)和场发射扫描电子显微镜(FE-SEM)对材料进行表征,交流阻抗(AC)分析仪测试材料的电阻。结果表明:MoO3和SiO2的加入均没有破坏体系的立方莹石结构;MoO3掺杂能提高NDC和NDCSi陶瓷材料的致密度,提高其晶界电导率和总电导率;MoO3掺入NDC体系具有烧结助剂的作用,掺入NDCSi体系既具有烧结助剂的作用,又具有晶界改善剂的作用。
Ce0.8Nd0.2O1.9 (NDCi) with high purity (<50 mg · kg-1 SiO2) and Ce0.8Nd0.2O1.9 (NDCSi) with SiO2 content of 500 mg · kg-1 were synthesized by sol- System, 1 mol% MoO3 were added to the NDC and NDCSi systems respectively to compare the effect of MoO3 doping on the microstructure and electrical properties of the system. The material was characterized by X-ray diffraction (XRD) and field emission scanning electron microscopy (FE-SEM), and the resistance of AC materials was measured by AC impedance analyzer. The results showed that the addition of MoO3 and SiO2 did not destroy the cubic fluorite structure. MoO3 doping could increase the density of NDC and NDCSi ceramics and increase their grain boundary conductivity and total conductivity. The addition of MoO3 into NDC system has the advantages of sintering The role of additives, incorporation of NDCSi system has both the role of sintering aids, but also has the role of grain boundary ameliorating agent.