制备了含两层绝缘层的双势垒结构隧道发光结,介绍了其结构特点,分析了电子在结中的共振隧穿特性。结合电子隧穿特性及结的发光机理,对结I-V特性中负阻现象的产生及其与表面等离极化激元激发发光的关系进行了研究。 The double-barrier tunnel junction with two layers of insulating layers was prepared. Its structure and characteristics were analyzed. The resonant tunneling characteristics of the electrons in the junction were analyzed. Based on the electron tunneling characteristics and the luminescence mechanism of the junction, the generation of negative resistance in the I-V junction and the relationship between the negative resistance and the surface plasmon polariton excited luminescence were studied.