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对二氧化硅薄膜驻极体中几种主要电荷的基本特性——固定氧化物电荷的特性特性、氧化物陷阱电荷的特性及硅一二氧二硅界面陷讲电荷的特性进行了分析。
The basic characteristics of several main charges in the thin film electrets - the characteristics of the fixed oxide charge, the characteristics of the oxide trap charge and the trapped charges at the Si02-Si02 interface were analyzed.