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基于微电子测试双桥结构 ,本文给出了缺陷特征参数提取方法 .这些特征参数包含了缺陷在硅片上的空间分布和粒径 (直径 )分布 ,它们对集成电路功能成品率仿真是重要的
Based on the double-bridge structure of microelectronic testing, this paper presents a method of extracting defect feature parameters, which include the spatial distribution and particle size (diameter) distribution of defects on the silicon, which are important for functional yield simulation of integrated circuits