论文部分内容阅读
本文叙述了用有限差法对多集电极横向晶体管电流增益进行三维数值分析。结果表明,如不采用N~+埋层,但选用适当薄的外延层,使纵向注入衬底的电流增加和使基区复合电流减小,可以实现提高多集电极横向晶体管电流增益的目的。
This paper describes the finite difference method for three-dimensional numerical analysis of the collector current transversal transistor current gain. The results show that if the N ~ + buried layer is not used, the appropriate thin epitaxial layer can be used to increase the current injected into the substrate and reduce the recombination current in the base region, so that the current gain of the multi-collector lateral transistor can be improved.