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本文描述注氧机在制作SOI(SIM0X)材料时,注入过程对顶层硅中产生粒子污染的影响,结合SIMS测试结果,从光路结构、电器参数、靶室等方面阐述粒子污染的机理,并提出相应的解决措施。
This paper describes the effect of the injection process on the particle contamination in the top silicon during the fabrication of SOI (SIM0X) material. Combined with SIMS test results, the mechanism of particle contamination from the aspects of optical path structure, electrical parameters, target chamber and so on is presented. The corresponding solution.