论文部分内容阅读
使用薄层电阻和芦瑟福背反射法研究了多晶硅膜中的As在进行快速热处理时的扩散情况。多晶硅淀积在氧化了的硅片上,并注入As,然后在一个VarianIA-200等温退火炉中进行热处理。在真空中,利用电阻性石墨加热片的红外辐射加热硅片,升温到1000℃以上只需大约几秒钟的时间。多晶硅中As的损耗速度和扩散速度比相同热处理条件下单晶硅中As的损耗速度和扩散速度快得多。晶粒长大之前的扩散与以前所报导的As在多晶硅中的扩散结果是一致的。然而,晶粒长大则表明As的扩散是增强了。
The diffusion of As in polycrystalline silicon films during rapid thermal annealing was investigated using sheet resistance and Rutherford back reflections. Polycrystalline silicon was deposited on the oxidized silicon wafer and As was implanted, followed by heat treatment in a VarianIA-200 isothermal annealing furnace. In a vacuum, heating the wafer with infrared radiation from a resistive graphite heating plate takes about a few seconds to reach about 1000 ° C. The loss rate and diffusion rate of As in polycrystalline silicon are much faster than the loss rate and diffusion rate of As in monocrystalline silicon under the same heat treatment conditions. The diffusion before grain growth is consistent with the previously reported diffusion of As in polycrystalline silicon. However, grain growth indicates that As diffusion is enhanced.