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The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor(RC-IGBT) results in the non-uniform current distribution in the integrated freewheeling diode(FWD), and then causes a parasitic thyristor to latch-up during its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. Furthermore, a novel RC-IGBT based on double trench IGBT is proposed. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.
The phenomenon that the wide P-emitter region in the conventional reverse conducting insulated gate bipolar transistor (RC-IGBT) results in the non-uniform current distribution in the integrated freewheeling diode (FWD), and then causes a parasitic thyristor to latch-up During its reverse-recovery process, which induces a hot spot in the local region of the device is revealed for the first time. It not only solves the snapback problem but also has uniform current distribution and high ruggedness during the reverse-recovery process.