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本文以EACVD法在硅衬底上生长金刚石薄膜。用多种方法分析它们界面间的结构,并探讨了硅衬底上沉积金刚石薄膜的过程。 用俄歇电子能谱作膜的深度剖析,得出各组成的纵向成分比表明:此界面有个硅和碳相混合的结构层;随着检测的表面化,硅成分减少,碳成分增加。经X射线光电子能谱以改变
In this paper, EACVD growth of diamond films on silicon substrates. A variety of methods were used to analyze the interfacial structures and the diamond deposition process on Si substrate. Using Auger electron spectroscopy as a film depth analysis, the longitudinal component ratio of each component is obtained. The results show that the interface has a structure layer of silicon and carbon mixed. With the detection of the surface, the silicon composition decreases and the carbon content increases. X-ray photoelectron spectroscopy to change