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本文介绍用SF_6+O_2,SF_6+Cl_2作腐蚀剂,反应离子刻蚀(RIE)的硅化钨/多晶硅复合栅工艺。着重研究了各工艺参数的改变对硅化钨和多晶硅刻蚀结果的影响,和刻蚀复合栅结构的最佳工艺条件。
This article describes the tungsten silicide / polysilicon composite gate process with reactive ion etching (RIE) using SF_6 + O_2, SF_6 + Cl_2 as etchants. The influence of the change of process parameters on the etching results of tungsten silicide and polycrystalline silicon and the optimum process conditions of etching the composite gate structure are emphatically studied.