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美国Cree公司启动全新项目,致力研究可实现的最高功率Ku波段单片微波集成电路。Cree公司称,该30W Ku波段碳化硅上氮化镓单片微波集成电路两级高功率放大器可覆盖13.5-14.75GHz商用卫星通讯波段,相较现在广泛使用的行波管或砷化镓解决方案,可为卫星通讯产业提供更高功率、更高效率的Ku波段解决方案。该50ΩKu波段单片微波集成电路大功率放大器面积紧凑(25mm×9.6mm),10个引脚,金属/陶瓷法兰封装(CMPA1D1E025F)或作为裸光片直接使用(CMPA1D1E030D),可以工作在漏极电压40V下,在平均输出功率42dBm
Cree, the United States launched a new project to study the highest achievable Ku-band monolithic microwave integrated circuits. Cree said the 30W Ku-band silicon carbide monolithic microwave GaN on-chip high-power amplifier can cover 13.5-14.75GHz commercial satellite communications band, compared with the widely used traveling wave tube or gallium arsenide solution , For the satellite communications industry to provide higher power, more efficient Ku-band solution. The 50ΩKu monolithic microwave integrated circuit high-power amplifier is compact (25mm × 9.6mm), 10-pin, metal / ceramic flange package (CMPA1D1E025F) or directly used as a bare chip (CMPA1D1E030D) Voltage 40V, the average output power of 42dBm