Cu2O thin films with (111) preferred orientation have been grown on glass and Cu substrates by rapid thermal oxi-dation of Cu at 500 ℃ for 45 s. The optical band gap energy was determined by spectral data of transmittance and absorbance to be 2.04eV. The electrical conductivity of grown films was measured around (1:1×10-5Ω-1cm-1 )at 300 K. Thermoelectric power measurements of the film were carried out. Furthermore, the properties of these films are compared with properties of Cu2O obtained by other methods.