《亚太电子商情》2003年10月报道:IBM日前发布了两项可提高半导体元件性能、降低耗电量的半导体制造技术。一项是可直接将应变硅和硅及绝缘膜结构(SDI)相组合的SSDOI技术,另一项技术是在生产互补金属氧化物半导体(CMOS)时,在同一晶圆上使用2种硅基层。对于应变硅,可通过延展锗化硅的低层和最上方的硅层,提高电子迁移率。在过去的 Asia Pacific E-Business reported in October 2003: IBM has released two semiconductor manufacturing technologies that can improve the performance of semiconductor components and reduce power consumption. One is the SSDOI technology that directly combines strained silicon with silicon and the insulating film structure (SDI). The other is the use of two silicon based layers on the same wafer in the production of complementary metal-oxide-semiconductor (CMOS) . For strained silicon, the electron mobility can be increased by extending the lower and uppermost silicon layers of silicon germanium. in the past