用投影光刻法刻制大规模集成电路精细线条,必须顾及光学系统在一定离焦范围内均满足光刻工艺技术要求。本文以五倍光刻物镜为例,介绍了工作频率为300对线/毫米,象方线视场φ28毫米,轴上点及轴外点的波差传递函数MTF曲线一致性好,并在±2微米离焦范围内MTF曲线变化平滑,且满足MTF≥0.4关键性问题。 With lithography engraving fine lines of large-scale integrated circuits, must take into account the optical system within a certain range of defocus to meet lithography process technology requirements. In this paper, a fivefold lithography objective lens is taken as an example. The working frequency is 300 pairs of lines per millimeter. The field of view of square lines is 28 mm. The consistency of the MTF curve of the wave transfer function between axes and out- MTF curve changes smoothly in the 2 μm defocus range and meets the key problem of MTF ≥0.4.