We clarify the essence of the method proposed by You (Phys. Rev. Lett. 90 (2004) 030402) to create the maximally entangled atomic N-GHZ state in the Mott insula
In six different regimes for a spatial phase diagram of a trapped interacting Bose-Fermi gas mixture at low temperatures, we present the conditions for the spat
Ag-doped Ge2Sb2 Te5 films were deposited by rf magnetron sputtering on SiO2/Si substrates.The content of Ag ranging from 4.5 to 11.3 at.% is determined by induc
We describe a simple protocol to produce two approximate copiers of an input state in the neighbourhood of a particular state. We show that the scheme can be re
The unintentionally doped samples of Al0.22 Ga0. 78N/GaN/Al0.22 Ga0. 78N/GaN multi-heterostructures have been designed and fabricated. The polarization induced