【摘 要】
：
The native point defect states in ZnO have been calculated by using a full-potential linear muffin-tin orbital method. The results show that Zn vacancy and O i
【机 构】
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Structure Research Laboratory, University of Science and Technology of China, Hefei 230026“,”Nationa
论文部分内容阅读
The native point defect states in ZnO have been calculated by using a full-potential linear muffin-tin orbital method. The results show that Zn vacancy and O interstitial produce the shallow acceptor levels above the valence band. The O vacancy produces a deep donor level, while Zn interstitial produces a shallow donor level, both below the conduction band. The Zn interstitial is the main factor which induces the native n-type conductivity in ZnO.
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