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辐射引起的软失效一直是影响半导体可靠性的一个重大问题。特别是宇宙射线引起的在地球表面的高能中子,由于其特有的高穿透性很难有效屏蔽防护。介绍了其造成半导体器件软失效的失效机理,并利用加速软失效测试模型分别对90,65和45 nm工艺的随机静态存储器的软失效率进行了分析,研究了该类中子造成的软失效率的影响因素及相关规律。据此预测了更高工艺技术产品的中子软失效率,在为芯片设计和制造阶段就对中子辐射可靠性的防护提供了一定的参考和依据。
Radiation-induced soft failure has been a major issue affecting the reliability of semiconductors. In particular, high-energy neutrons on the Earth’s surface caused by cosmic rays are difficult to shield effectively due to their unique high penetration. The failure mechanism of the semiconductor device caused by soft failure is introduced. The soft failure rate of the random static memory of 90, 65 and 45 nm process is analyzed respectively by the acceleration soft failure test model. The soft failure caused by the neutron is studied. Rate of influencing factors and related laws. Based on this, the neutron soft failure efficiency of higher process technology products is predicted, which provides a reference and basis for the protection of neutron radiation reliability for the chip design and manufacturing stage.