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针对GaN光电阴极表面势垒对电子逸出几率的影响问题,应用玻尔兹曼分布和基于Airy函数的传递矩阵法计算了GaN光电阴极的电子逸出几率,发现电子逸出几率主要由Ⅰ势垒决定,Ⅱ势垒对电子逸出几率的影响有限.利用自行研制的GaN光电阴极激活评估实验系统,测试了透射式GaN光电阴极样品的激活光电流.实验发现,Cs单独激活引起电子逸出几率的显著增加,而Cs单独充分激活后的Cs/O交替激活对电子逸出几率的影响有限.理论计算结果与激活光电流测试结果一致,其原因是Cs单独激活对降低真空能级的贡献远大于Cs/O共同激活.
In view of the influence of the potential barrier of GaN photocathode on the escape probability of electrons, the probability of electron escape from GaN photocathode was calculated by using Boltzmann distribution and transfer matrix method based on Airy function. It was found that the probability of electron escape mainly consisted of Ⅰ potential Barrier determined that the potential barrier of Ⅱ barrier has a limited impact on the electron escape probability.The activated photocurrent of the transmissive GaN photocathode was tested by a self-developed GaN photocathode activation evaluation system.It was found that the activation of Cs alone led to the escape of electrons The probability of electron emission is limited, while the effect of Cs / O alternating activation after Cs fully activating on the probability of electron escape is limited.The theoretical calculation results are in agreement with the results of activating photocurrent test, which is due to the contribution of Cs activation alone to reducing the vacuum level Much larger than Cs / O co-activation.